Power delivery for embedded bridge die utilizing trench structures

ABSTRACT

Methods/structures of joining package structures are described. Those methods/structures may include a die disposed on a surface of a substrate, an interconnect bridge embedded in the substrate, and at least one vertical interconnect structure disposed through a portion of the interconnect bridge, wherein the at least one vertical interconnect structure is electrically and physically coupled to the die.

CROSS-REFERENCE TO RELATED APPLICATION

This patent application is a continuation of U.S. patent applicationSer. No. 17/540,141, filed Dec. 1, 2021, which is a continuation of U.S.patent application Ser. No. 16/634,864, filed Jan. 28, 2020, now U.S.Pat. No. 11,222,848, issued Jan. 11, 2022, which is a U.S. NationalPhase Application under 35 U.S.C. § 371 of International Application No.PCT/US2017/053960, filed Sep. 28, 2017, entitled “POWER DELIVERY FOREMBEDDED BRIDGE DIE UTILIZING TRENCH STRUCTURES,” which designates theUnited States of America, the entire disclosure of which are herebyincorporated by reference in their entirety and for all purposes.

BACKGROUND

Embedded multi-die interconnect bridge (EMIB) technology may includeembedding a bridge die into a microelectronic package substrate, such asinto an organic package substrate. A bridge die may comprise severalmetal layers for input/output (I/O) within a bulk silicon substrate. Thebridge die is typically isolated from the package by a material, such asby a dielectric material located between a bottom portion of the bridgedie and the package substrate. Due to high I/O density, EMIB structurescan have high signal bandwidth. However, routing power delivery pathsfrom a bridge die structure to a microelectronic package can presentissues in terms of resistance and inductance challenges, for example.

BRIEF DESCRIPTION OF THE DRAWINGS

While the specification concludes with claims particularly pointing outand distinctly claiming certain embodiments, the advantages of theseembodiments can be more readily ascertained from the followingdescription when read in conjunction with the accompanying drawings inwhich:

FIG. 1 a represents a cross-sectional view of a package structureaccording to embodiments.

FIGS. 1 b-1 d represents top views of package structures according toembodiments.

FIGS. 2 a-2 f represent cross-sectional views of methods of forming aninterconnect bridge according to embodiments.

FIGS. 3 a-3 f represent cross-sectional views of methods of forming aninterconnect bridge according to embodiments.

FIG. 4 represents a flow chart of a method of forming package structuresaccording to embodiments.

FIG. 5 represents a schematic of a computing device according toembodiments.

DETAILED DESCRIPTION

In the following detailed description, reference is made to theaccompanying drawings that show, by way of illustration, specificembodiments in which the methods and structures may be practiced. Theseembodiments are described in sufficient detail to enable those skilledin the art to practice the embodiments. It is to be understood that thevarious embodiments, although different, are not necessarily mutuallyexclusive. For example, a particular feature, structure, orcharacteristic described herein, in connection with one embodiment, maybe implemented within other embodiments without departing from thespirit and scope of the embodiments. In addition, it is to be understoodthat the location or arrangement of individual elements within eachdisclosed embodiment may be modified without departing from the spiritand scope of the embodiments.

The following detailed description is, therefore, not to be taken in alimiting sense, and the scope of the embodiments is defined only by theappended claims, appropriately interpreted, along with the full range ofequivalents to which the claims are entitled. In the drawings, likenumerals may refer to the same or similar functionality throughout theseveral views. The terms “over”, “to”, “between” and “on” as used hereinmay refer to a relative position of one layer with respect to otherlayers. One layer “over” or “on” another layer or bonded “to” anotherlayer may be directly in contact with the other layer or may have one ormore intervening layers. One layer “between” layers may be directly incontact with the layers or may have one or more intervening layers.Layers and/or structures “adjacent” to one another may or may not haveintervening structures/layers between them. A layer(s)/structure(s) thatis/are directly on/directly in contact with anotherlayer(s)/structure(s) may have no intervening layer(s)/structure(s)between them.

Various implementations of the embodiments herein may be formed orcarried out on a substrate, such as a package substrate. A packagesubstrate may comprise any suitable type of substrate capable ofproviding electrical communications between a die, such as an integratedcircuit (IC) die, and a next-level component to which an microelectronicpackage may be coupled (e.g., a circuit board). In another embodiment,the substrate may comprise any suitable type of substrate capable ofproviding electrical communication between an IC die and an upper ICpackage coupled with a lower IC/die package, and in a further embodimenta substrate may comprise any suitable type of substrate capable ofproviding electrical communication between an upper IC package and anext-level component to which an IC package is coupled.

A substrate may also provide structural support for a die/device. By wayof example, in one embodiment, a substrate may comprise a multi-layersubstrate—including alternating layers of a dielectric material andmetal—built-up around a core layer (either a dielectric or a metalcore). In another embodiment, a substrate may comprise a corelessmulti-layer substrate. Other types of substrates and substrate materialsmay also find use with the disclosed embodiments (e.g., ceramics,sapphire, glass, etc.). Further, according to one embodiment, asubstrate may comprise alternating layers of dielectric material andmetal that are built-up over a die itself—this process is sometimesreferred to as a “bumpless build-up process.” Where such an approach isutilized, conductive interconnects may or may not be needed (as thebuild-up layers may be disposed directly over a die, in some cases).

A die/device may comprise any type of integrated circuit device. In oneembodiment, the die may include a processing system (either single coreor multi-core). For example, the die may comprise a microprocessor, agraphics processor, a signal processor, a network processor, a chipset,etc. In one embodiment, a die may comprise a system-on-chip (SoC) havingmultiple functional units (e.g., one or more processing units, one ormore graphics units, one or more communications units, one or moresignal processing units, one or more security units, etc.). However, itshould be understood that the disclosed embodiments are not limited toany particular type or class of devices/die.

Conductive interconnect structures may be disposed on a side(s) of adie/device, and may comprise any type of structure and materials capableof providing electrical communication between a die/device and asubstrate, or another die/device, for example. In an embodiment,conductive interconnect structures may comprise an electricallyconductive terminal on a die (e.g., a pad, bump, stud bump, column,pillar, or other suitable structure or combination of structures) and acorresponding electrically conductive terminal on a substrate (e.g., apad, bump, stud bump, column, pillar, or other suitable structure orcombination of structures). Solder (e.g., in the form of balls or bumps)may be disposed on the terminals of the substrate and/or die/device, andthese terminals may then be joined using a solder reflow process. Ofcourse, it should be understood that many other types of interconnectsand materials are possible (e.g., wirebonds extending between a die anda substrate).

The terminals on a die may comprise any suitable material or anysuitable combination of materials, whether disposed in multiple layersor combined to form one or more alloys and/or one or more intermetalliccompounds. For example, the terminals on a die may include copper,aluminum, gold, silver, nickel, titanium, tungsten, as well as anycombination of these and/or other metals. In other embodiments, aterminal may comprise one or more non-metallic materials (e.g., aconductive polymer). The terminals on a substrate may also comprise anysuitable material or any suitable combination of materials, whetherdisposed in multiple layers or combined to form one or more alloysand/or one or more intermetallic compounds.

For example, the terminals on a substrate may include copper, aluminum,gold, silver, nickel, titanium, tungsten, as well as any combination ofthese and/or other metals. Any suitable solder material may be used tojoin the mating terminals of the die and substrate, respectively. Forexample, the solder material may comprise any one or more of tin,copper, silver, gold, lead, nickel, indium, as well as any combinationof these and/or other metals. The solder may also include one or moreadditives and/or filler materials to alter a characteristic of thesolder (e.g., to alter a reflow temperature).

Embodiments of methods of forming packaging structures, such as methodsof forming vertical power delivery structures incorporated in bridgedies, are described. Those methods/structures may include a die disposedon a surface of a substrate, an interconnect bridge embedded in thesubstrate, and at least one vertical interconnect structure disposedthrough a portion of the interconnect bridge, wherein the at least onevertical interconnect structure is electrically and physically coupledto the die. The embodiments herein enable a vertical power delivery pathto provide a short and effective current flowing path, which reducesresistance and inductance.

FIGS. 1 a-1 d illustrate cross-sectional and top views of embodiments ofpackage structures/assembles comprising vertical interconnect structuresdisposed within interconnect bridge die. In FIG. 1 a (cross-sectionalview), a package structure 100 is depicted which may comprise any typeof microelectronic package 100, such as a multi-die package, forexample. The package structure 100 may include a die/device 104, 104′wherein two devices are shown, and wherein the die 104, 104′ may bedisposed on a first surface 101 of the substrate 102. The substrate 102may comprise any number of suitable materials, and may comprise anorganic substrate in an embodiment. The die 104, 104′ may comprise anysuitable type of die, such as a microprocessor, a chipset, a graphicsdevice, a wireless device, a memory device, an application specificintegrated circuit, or the like. Any number of die may be included onthe package substrate, and may include a plurality of stacked die, in anembodiment.

The die 104, 104′ may comprise high density die 104, 104′, and mayinclude very fine pitched conductive structures (less than about 50microns pitch between adjacent features, for example), such as I/Oconductive bumps, for example. In an embodiment, the die 104, 104′ maycomprise a high bandwidth memory die. The die 104 104′ may be physicallyand electrically coupled to the substrate 102 by a plurality ofconductive interconnect structures 106.

An interconnect bridge 108 may be embedded in the substrate 102 belowthe die 104, 104′. The interconnect bridge 108 may be surrounded by alayer of dielectric material within the substrate 102 (not shown). In anembodiment, at least a portion of the plurality of conductiveinterconnect structures 106 may be disposed on a first surface 118 ofthe interconnect bridge 108 and/or may be connected to conductive pads116 disposed on the first surface 118 of the interconnect bridge 108.

The interconnect bridge 108 may comprise a bulk silicon portion 105 anda plurality of interconnect structures 110 disposed therein. Theplurality of interconnect structures 110 may couple the die 104, 104′ toa first terminal end 136 of at least one vertical interconnect structure112 disposed within the interconnect bridge 108. The at least onevertical interconnect structure 112 may comprise a conductive materialwith a dielectric material disposed on a surface thereon, such that theconductive material is surrounded by the dielectric material. Thedielectric material may comprise such materials as silicon dioxide,silicon nitride, non-conductive polymer materials, and the like, and maycomprise a thickness of about 0.1 microns to about 10 microns. Theconductive material of the interconnect bridge 108 may comprise suchmaterials as copper and its alloys, or any other suitable conductivematerial that is required by the particular design requirements.

The at least one vertical interconnect 112 may comprise a variety ofshapes, such as a square shape, a rectangular shape, or a circularshape, for example. In an embodiment, a diameter of the at least onevertical interconnect structure 112 may comprise about 30 microns toabout 200 microns. The at least one vertical structure 112 may extendthrough at least a portion the interconnect bridge 108, and a secondterminal end 137 of at least one vertical interconnect structure 112 maybe physically coupled with conductive pads 114 disposed at leastpartially within the substrate 102, wherein the conductive pads 114 maybe disposed at least partially on a second surface 120 of theinterconnect bridge 108. In an embodiment, the at least one verticalinterconnect structure 112 may comprise a height 142 that is greaterthan about one half of a height 140 of the interconnect bridge 108.

The pads 114 may be physically and electrically coupled to conductivelayers 103 disposed within the substrate 102, and may be separated fromeach other by a substrate dielectric material 107. A plurality of solderballs 128 may be disposed on a second surface 129 of the substrate 102,which may couple the substrate 102 to a board 130, such as amotherboard, for example. The board 130 may comprise any suitable typeof circuit board or other substrate capable of providing electricalcommunication between one or more of the various components disposed onthe board 130.

In one embodiment, for example, the board 130 may comprise a printedcircuit board (PCB) comprising multiple metal layers separated from oneanother by a layer of dielectric material and interconnected byelectrically conductive vias. Any one or more of the metal layers may beformed in a desired circuit pattern to route—perhaps in conjunction withother metal layers-electrical signals between the components coupledwith the board 130. However, it should be understood that the disclosedembodiments are not limited to the above-described PCB and, further,that board 130 may comprise any other suitable substrate.

The at least one vertical interconnect structure 112 may comprise aportion of a vertical signal and may comprise a power delivery path fordevices, such as the die/devices 104, 104′ that are communicativelycoupled with the package structure 100. By providing verticalinterconnect structures 112, power may be delivered vertically from thesubstrate package 102 to the die 104, 104′. In an embodiment, thepackage plane which the interconnect bridge 108 lands on can bedesignated to power nets that need to be supplied vertically. Underneathdie power bumps 106, vias 117 connecting to conductive pads 116 disposedon the interconnect bridge 108 may be used to connect to the meshedpower plane structures 110, which provide for the vertical deliverypath. Similarly, the vertical interconnect structures 112 can also beused for ground power nets.

The embodiments additionally include a horizontal power delivery path109 of a horizontal power net 126, wherein power and ground bumps 107for I/O circuits of a device, such as a HBM die, for example, may bearranged in long rows 111 as shown in FIG. 1B (top view of packagestructure 100). Since the bridge die 108 includes vertical interconnectstructures such as conductive trench structures 112, in an embodiment, avertical power delivery path is provided in addition to a horizontalpower delivery path.

The vertical power delivery path of the embodiments included hereinsignificantly reduce resistance and inductance, and thus reduce powernoise for I/O signaling.

By using the conductive trench structures in the silicon interconnectbridge as the vertical power delivery path to connect the packageplanes, a short and effective current flowing path is provided. Thevertical power delivery is much more effective than the horizontal powerdelivery for the long and narrow power bump groups. The verticalinterconnect structures can be designed and fabricated as conductivestructures that have larger dimensions, such as 30 to 200 microndiameter, for example, to reduce the resistance and inductance.

Therefore, the vertical interconnect structures described herein providegood current flowing path by electrically connecting to the packagepower plane located near the second surface of the package substrate.The power rail current can directly flow through the verticalinterconnect structures 112 and the vias in the bridge to reach thepackage surface and the power bumps. In an embodiment, the package plane103 which the interconnect bridge 108 lands on may be designated topower nets or ground nets that need to be supplied vertically, and diepower bumps and stacked vias on the surface of the interconnect die maybe used to connect to meshed power plane structures located on theinterconnect bridge die/structure.

FIG. 1 c depicts a top view of the interconnect bridge 108, wherein aplurality of vertical interconnect structures 112 are disposed. Each ofthe individual vertical interconnect structures 112 comprise aconductive portion 113, and a dielectric portion 115 surrounding theconductive portion 113, disposed within the silicon material 105 of theinterconnect bridge 108. In FIG. 1 d (depicting a top view of theinterconnect bridge 108), groups of individual conductive vias 113 ofthe vertical interconnect structures 112 may be isolated by a commondielectric material 115 to form a group vertical interconnect structure112′. Both group vertical interconnect structures 112′ and individualvertical interconnect structures 112 may be disposed with siliconmaterial 105 of the interconnect bridge structure 108.

FIGS. 2 a-2 f depicts a cross sectional view of methods of forming thepackage structures of the embodiments herein. In FIG. 2 a , aninterconnect bridge 208 may comprise a silicon material 205 and aplurality of conductive interconnect structures 210 that are disposedwithin the silicon material 205 of the interconnect bridge structure208. A removal process 217, which may comprise a trench etch process 217and/or a laser drilling process, may be employed to formtrenches/openings 216 in the silicon material 205 (FIG. 2 b ). Theopenings 216 may expose a portion of the conductive interconnectstructures 210. A cleaning process may be performed subsequent toforming the openings 216.

A formation process 218, which may comprise a deposition process, suchas a sputtering and/or chemical vapor deposition (CVD) process 218, forexample, may be employed to form a conductive material/vias 213 withinthe trench openings 216 (FIG. 2 c ). A first terminal end 236 of theconductive material/vias 213 disposed within the openings 216 may bephysically and electrically coupled with portions of the conductiveinterconnect structures 210. Any number and shape of conductive vias 213may be formed within the silicon material 205, according to theparticular application. The diameter of the conductive structures/vias213 may comprise about 30 microns to about 200 microns, in anembodiment, but may comprise any suitable size according to theparticular application. The conductive vias 213 may at least partiallyextend through a portion of the silicon material 205 of the interconnectbridge 208.

In an embodiment, isolation openings/trenches 218 may be formed in thesilicon material 205 adjacent the conductive vias 213 (FIG. 2 d ). Theisolation openings 219 may be formed by using a silicon laserdrill/etching process 217, for example. The openings 219 may comprise adiameter/width of about 100 microns to about 200 microns in anembodiment. An isolation material 215 may be formed in the openings 219by employing a formation process 219, such as a chemical vapordeposition process 219, for example (FIG. 2 e ). The isolation material215 may comprise dielectric materials such as silicon dioxide, siliconnitride, non-conductive polymers, and the like, and may comprise athickness of between about 1 micron to about 100 microns. Thedielectric/isolation material may be formed around/adjacent individualconductive vias 213 and/or around/adjacent groups of conductive vias 213to form a plurality of vertical interconnect structures 212 within thesilicon material 205 of the interconnect bridge 208. In an embodiment,the dielectric material 215 can be directly adjacent to the conductivematerial 213, or there may be silicon substrate material between thedielectric material 215 and the conductive material 213.

Conductive pads 224 may be formed on a second terminal end 237 of eachof the vertical interconnect structures 212, wherein the conductive pads224 may comprise conductive materials, such as copper and copper alloys,for example (FIG. 2 f ). The second terminal ends 237 of the verticalinterconnect structures 212 may be electrically bonded to interconnectlayers disposed within a package substrate, such as those shown in FIG.1 a , for example. The interconnect layers may comprise package power orground plane metal layers, in an embodiment.

FIGS. 3 a-3 f depicts a cross sectional view of methods of forming thepackage structures of the embodiments herein. In FIG. 3 a , aninterconnect bridge 308 may comprise a silicon material 305 and aplurality of conductive interconnect structures 310 that are disposedwithin the silicon material 305. A removal process 317, which maycomprise a trench etch process 317 and/or a laser drilling process, maybe employed to form trenches/openings 316 in the silicon material 305(FIG. 3 b ). The openings 316 may expose a portion of the conductiveinterconnect structures 310. A cleaning process may be performedsubsequent to forming the openings 316.

A formation process 319, which may comprise a deposition process, suchas a sputtering and/or chemical vapor deposition (CVD) process 319, forexample, may be employed to form an isolation material 315 in theopenings 319 for example (FIG. 3 c ). The isolation material 315 maycomprise dielectric materials such as silicon dioxide, silicon nitride,non-conductive polymers, and the like. The dielectric/isolation material315 may be formed on surfaces of the openings 319, and may comprise aconformal lining in the openings 319, wherein a portion of the openings319 remain. In an embodiment, the isolation material 315 may comprise athickness of about 50 nm to about 10 microns. A bottom portion of theisolation material 315 may be removed by an etching or laser drillingprocess 321 to expose the underlying conductive interconnect structures310 (FIG. 3 d ).

A conductive material 313 may be formed within the opening 319 adjacentthe isolation material 315 disposed in the openings 319, by utilizing adeposition process 318, such as a sputtering and/or chemical vapordeposition (CVD) process 318, for example (FIG. 3 e ). Thus, a pluralityof vertical interconnect structures 312 may be formed in the siliconmaterial 305 of the interconnect bridge 308. A first terminal end 336 ofthe vertical interconnect structures 312 may be physically andelectrically coupled with portions of the conductive interconnectstructures 310. Any number and shape of vertical interconnect structures312 may be formed within the interconnect bridge 308, according to theparticular application. The diameter of the vertical interconnectstructures 312 may comprise about 30 microns to about 200 microns, in anembodiment, but may comprise any suitable size according to theparticular application. The vertical interconnect structures 312 may atleast partially extend through a portion of the silicon material 305 ofthe interconnect bridge 308.

Conductive pads 324 may be formed on a second terminal end 327 of eachof the vertical interconnect structures 312, wherein the conductive pads324 may comprise conductive materials, such as copper and copper alloys,for example (FIG. 3 f ). The second terminal ends 327 of the verticalinterconnect structures 312 may be electrically bonded to interconnectlayers disposed within a package substrate, such as those shown in FIG.1 a , for example. The interconnect layers may comprise package power orground plane metal layers, in an embodiment. In other embodiments, thevertical interconnect structures may be formed prior to the interconnectlayers disposed within the substrate.

The embodiments described herein significantly improves the powerdelivery performance. Delivering power vertically shortens the pathwaydistance and results in less parasitic resistance and inductance. Thevertical power delivery pathway of the embodiments enable the reductionof static and AC inductance by about 40-50 percent, in some cases. Theconductive vertical interconnect structures offer new power deliveryarchitecture/schemes. For example, I/O structures that may comprisemultiple power rails, may not allow package surface routing, which canresult in power delivery design bottlenecks. However, using verticalconductive interconnect structures can provide alternative verticalpower delivery schemes.

The vertical interconnect structures for power delivery described hereincan be fabricated with relatively large dimensions as compared withtypical through-silicon via structures, and conventional laseretching/drilling process may be employed without the need for advancedfabrication processes, thus reducing cost. With both architecture anddesign changes, the package structures of the embodiments herein providedeliver power through both vertical and horizontal paths. Power deliverywith the extra vertical path can significantly improve the power netperformance.

For example the DC voltage distribution of the power net of theembodiments herein may provide a voltage drop improvement from about13.4 mV to about 6.3 mV, resulting in a 52% reduction. The AC powerdelivery may result in the power delivery loop inductance being reducedfrom about 234 pH to about 148 pH, showing a 37% reduction. In addition,the vertical interconnect structures described herein may be used forboth power rails and ground Vss rails, which enables voltage drop and ACnoise reduction on Vss rails.

FIG. 4 depicts a method 400 according to embodiments herein. At step402, a first plurality of openings may be formed in an interconnectbridge structure, wherein the interconnect bridge structure furthercomprises a plurality of conductive layers beneath the plurality ofopenings. The openings may be formed by using a laser drilling processand/or an etching process, for example. The interconnect bridgestructure may comprise a bulk silicon portion, and the plurality ofopenings may be formed by laser drilling openings, which may compriseabout 30 micron to about 200 micron diameter openings, in an embodiment,through the bulk silicon portion.

A cleaning process may be performed subsequent to the formation of theplurality of openings. At step 404, a conductive material may be formedin the plurality of openings and on at one of the plurality ofconductive layers. The conductive material may comprise such conductivematerials as copper and copper alloys, for example. The conductivematerial may comprise a portion of plurality of vertical interconnectstructures, which may extend through at least half of a height of theinterconnect bridge. The conductive material may further comprise adielectric material adjacent a surface of the conductive material.

At step 406, the interconnect bridge structure may be embedded into apackage substrate. The interconnect bridge structure comprising theplurality of vertical interconnect structures provides a vertical powerdelivery pathway, which may be an additional power delivery pathway toan existing horizontal delivery pathway.

The structures of the embodiments herein may be coupled with anysuitable type of structures capable of providing electricalcommunications between a microelectronic device, such as a die, disposedin package structures, and a next-level component to which the packagestructures may be coupled (e.g., a circuit board). The device/packagestructures, and the components thereof, of the embodiments herein maycomprise circuitry elements such as logic circuitry for use in aprocessor die, for example. Metallization layers and insulating materialmay be included in the structures herein, as well as conductivecontacts/bumps that may couple metal layers/interconnects to externaldevices/layers. In some embodiments the structures may further comprisea plurality of dies, which may be stacked upon one another, dependingupon the particular embodiment. In an embodiment, the die(s) may bepartially or fully embedded in a package structure.

The various embodiments of the package structures included herein may beused for system on a chip (SOC) products, and may find application insuch devices as smart phones, notebooks, tablets, wearable devices andother electronic mobile devices. In various implementations, the packagestructures may be included in a laptop, a netbook, an ultrabook, apersonal digital assistant (PDA), an ultra-mobile PC, a mobile phone, adesktop computer, a server, a printer, a scanner, a monitor, a set-topbox, an entertainment control unit, a digital camera, a portable musicplayer, or a digital video recorder, and wearable devices. In furtherimplementations, the package devices herein may be included in any otherelectronic devices that process data.

FIG. 5 is a schematic of a computing device 500 that may be implementedincorporating embodiments of the package structures described herein.For example, any suitable ones of the components of the computing device500 may include, or be included in, package structures/assemblies, suchas is depicted in FIG. 1 a , wherein an interconnect bridge comprising aplurality of vertical interconnect structures is embedded within apackage substrate. In an embodiment, the computing device 500 houses aboard 502, such as a motherboard 502 for example. The board 502 mayinclude a number of components, including but not limited to a processor504, an on-die memory 506, and at least one communication chip 508. Theprocessor 504 may be physically and electrically coupled to the board502. In some implementations the at least one communication chip 508 maybe physically and electrically coupled to the board 502. In furtherimplementations, the communication chip 508 is part of the processor504.

Depending on its applications, computing device 500 may include othercomponents that may or may not be physically and electrically coupled tothe board 502, and may or may not be communicatively coupled to eachother. These other components include, but are not limited to, volatilememory (e.g., DRAM) 509, non-volatile memory (e.g., ROM) 510, flashmemory (not shown), a graphics processor unit (GPU) 512, a chipset 514,an antenna 516, a display 518 such as a touchscreen display, atouchscreen controller 520, a battery 522, an audio codec (not shown), avideo codec (not shown), a global positioning system (GPS) device 526,an integrated sensor 528, a speaker 530, a camera 532, compact disk (CD)(not shown), digital versatile disk (DVD) (not shown), and so forth).These components may be connected to the system board 502, mounted tothe system board, or combined with any of the other components.

The communication chip 508 enables wireless and/or wired communicationsfor the transfer of data to and from the computing device 500. The term“wireless” and its derivatives may be used to describe circuits,devices, systems, methods, techniques, communications channels, etc.,that may communicate data through the use of modulated electromagneticradiation through a non-solid medium. The term does not imply that theassociated devices do not contain any wires, although in someembodiments they might not. The communication chip 508 may implement anyof a number of wireless or wired standards or protocols, including butnot limited to Wi-Fi (IEEE 802.11 family), WiMAX (IEEE 802.16 family),IEEE 802.20, long term evolution (LTE), Ev-DO, HSPA+, HSDPA+, HSUPA+,EDGE, GSM, GPRS, CDMA, TDMA, DECT, Bluetooth, Ethernet derivativesthereof, as well as any other wireless and wired protocols that aredesignated as 3G, 4G, 5G, and beyond.

The computing device 500 may include a plurality of communication chips508. For instance, a first communication chip may be dedicated toshorter range wireless communications such as Wi-Fi and Bluetooth and asecond communication chip may be dedicated to longer range wirelesscommunications such as GPS, EDGE, GPRS, CDMA, WiMAX, LTE, Ev-DO, andothers. The term “processor” may refer to any device or portion of adevice that processes electronic data from registers and/or memory totransform that electronic data into other electronic data that may bestored in registers and/or memory.

In various implementations, the computing device 500 may be a laptop, anetbook, a notebook, an ultrabook, a smartphone, a tablet, a personaldigital assistant (PDA), an ultra mobile PC, a wearable device, a mobilephone, a desktop computer, a server, a printer, a scanner, a monitor, aset-top box, an entertainment control unit, a digital camera, a portablemusic player, or a digital video recorder. In further implementations,the computing device 500 may be any other electronic device thatprocesses data.

Embodiments of the package structures described herein may beimplemented as a part of one or more memory chips, controllers, CPUs(Central Processing Unit), microchips or integrated circuitsinterconnected using a motherboard, an application specific integratedcircuit (ASIC), and/or a field programmable gate array (FPGA).

Examples

Example 1 is a microelectronic package structure comprising: a diedisposed on a surface of a substrate; an interconnect bridge embedded inthe substrate; and at least one vertical interconnect structure disposedthrough a portion of the interconnect bridge, wherein the at least onevertical interconnect structure is electrically and physically coupledto the die.

Example 2 includes the microelectronic package structure of example 1,wherein the at least one vertical interconnect structure comprises aconductive material disposed in a central portion of the at least onevia, and a dielectric material disposed on a surface of the conductivematerial.

Example 3 includes the microelectronic package structure of example 1wherein a plurality of conductive interconnect structures disposed onthe die electrically couple the die with the at least one verticalinterconnect structures.

Example 4 includes the microelectronic package structure of example 1wherein the die comprises a high bandwidth memory die.

Example 5 includes the microelectronic package structure example 1wherein the at least one vertical interconnect structure comprises oneof a ground vertical interconnect structure or a power verticalinterconnect structure.

Example 6 includes the microelectronic package structure of example 1wherein the at least one vertical interconnect structure comprises aconductive pad electrically and physically coupled with a conductivestructure disposed in the substrate, beneath the embedded interconnectbridge.

Example 7 includes the microelectronic package structure of example 1wherein the at least one vertical interconnect structure comprises aportion of a vertical power delivery path.

Example 8 includes the microelectronic package structure of example 1wherein a plurality of vertical interconnect structures are disposedbeneath the die, and a dielectric material surrounds the plurality ofvertical interconnect structures.

Example 9 is a method of forming a microelectronic package structurecomprising: forming a first plurality of openings in an interconnectbridge structure, wherein the interconnect bridge structure furthercomprises a plurality of conductive layers beneath the plurality ofopenings; forming a conductive material in the plurality of openings andon at least one of the plurality of conductive layers; and embedding theinterconnect bridge structure into a package substrate.

Example 10 includes the method of forming the microelectronic packagestructure of example 9 wherein forming the first plurality of openingscomprises laser drilling a bulk silicon portion of the interconnectbridge to form the first plurality of openings.

Example 11 includes the method of forming the microelectronic packagestructure of example 9 further comprising forming a second plurality ofopenings adjacent the conductive material.

Example 12 includes the method of forming the microelectronic packagestructure of example 11 further comprising forming a dielectric materialin the second plurality of openings.

Example 13 includes the method of forming the microelectronic packagestructure of example 9 further comprising forming a conformal layer ofdielectric material in the openings prior to forming the conductivematerial in the openings, and forming the conductive material on theconformal dielectric material.

Example 14 includes the method of forming the microelectronic packagestructure of example 9 further comprising forming conductive pads on aterminal end of the conductive material, wherein the conductive padextends a distance from a surface of the interconnect bridge.

Example 15 includes the method of forming the microelectronic packagestructure of example 14 further including physically and electricallycoupling the conductive pad to a conductive layer disposed in thepackage substrate.

Example 16 includes the method of forming the microelectronic packagestructure of example 9, further comprising coupling a die to a surfaceof the substrate package, wherein a plurality of conductive interconnectstructures disposed on a surface of the die are physically andelectrically coupled to at least one of the conductive layers disposedwithin the interconnect bridge.

Example 17 is a microelectronic system, comprising: a board; amicroelectronic package attached to the board, wherein themicroelectronic package comprises: a die disposed on a surface of asubstrate; an interconnect bridge embedded at least partially in thepackage substrate; at least one vertical interconnect structure disposedthrough at least a portion of the interconnect bridge, wherein the atleast one vertical interconnect structure is electrically and physicallycoupled to the die.

Example 18 includes the microelectronic system of example 17 wherein theinterconnect bridge comprises a silicon material, and wherein a firstterminal end of the at least one vertical interconnect structure isdisposed on a conductive pad that is physically and electrically coupledwith a conductive layer disposed within the substrate.

Example 19 includes the microelectronic system of example 18 wherein theconductive pad is disposed at least partially within the substrate.

Example 20 includes the microelectronic system of example 18 wherein theinterconnect bridge comprises a plurality of interconnect structuresdisposed within the interconnect bridge, that are coupled to a secondterminal end of the at least one vertical interconnect structure, andwherein the plurality of interconnect structures is coupled to dieinterconnect structures disposed at least partially within the packagesubstrate.

Example 21 includes the microelectronic system of example 17 whereinindividual ones of the at least one vertical interconnect structurecomprise a dielectric material disposed adjacent a surface of aconductive via.

Example 22 includes the microelectronic system of example 21 whereingroups of the conductive vias comprise a dielectric material surroundingthe group of conductive vias.

Example 23 includes the microelectronic system of example 17 wherein thedie comprises a high bandwidth memory die.

Example 24 includes the microelectronic system of example 23 wherein thehigh bandwidth memory die comprises a horizontal power delivery path anda vertical power delivery path.

Example 25 includes the microelectronic package system of example 24wherein the at least one vertical interconnect structure comprises oneof a rectangular shape, a circular shape or a square shape.

Although the foregoing description has specified certain steps andmaterials that may be used in the methods of the embodiments, thoseskilled in the art will appreciate that many modifications andsubstitutions may be made. Accordingly, it is intended that all suchmodifications, alterations, substitutions and additions be considered tofall within the spirit and scope of the embodiments as defined by theappended claims. In addition, the Figures provided herein illustrateonly portions of exemplary microelectronic devices and associatedpackage structures that pertain to the practice of the embodiments.Thus, the embodiments are not limited to the structures describedherein.

What is claimed is:
 1. A microelectronic package structure comprising: asubstrate; an interconnect bridge on a surface of the substrate, theinterconnect bridge comprising a die pad over a conductive interconnectstructure over a silicon material, and the interconnect bridgecomprising at least one vertical interconnect structure extendingthrough the silicon material beneath the conductive interconnectstructure, the conductive interconnect structure comprising a firstplurality of conductive lines along a first direction and a secondplurality of conductive lines along a second direction different thanthe first direction, and the at least one vertical interconnectstructure vertically beneath and coupled to the conductive interconnectstructure; a die above the interconnect bridge, the die coupled to thedie pad of the interconnect bridge; and a dielectric layer on a top andalong sides of the interconnect bridge, the dielectric layer between thedie and the interconnect bridge.
 2. The microelectronic packagestructure of claim 1, wherein the first plurality of conductive linesalong the first direction is in a first layer, and the second pluralityof conductive lines along the second direction is in a second layerdifferent than the first layer.
 3. The microelectronic package structureof claim 1, wherein the conductive interconnect structure is a meshedpower plane structure.
 4. The microelectronic package structure of claim1, wherein the at least one vertical interconnect structure iselectrically coupled to the die.
 5. The microelectronic packagestructure of claim 1, wherein the die is a memory die.
 6. Themicroelectronic package structure of claim 1, wherein the at least onevertical interconnect structure comprises one of a ground verticalinterconnect structure or a power vertical interconnect structure. 7.The microelectronic package structure of claim 1, wherein the at leastone vertical interconnect structure comprises a portion of a verticalpower delivery path.
 8. The microelectronic package structure of claim1, wherein the at least one vertical interconnect structure comprises agroup of conductive vias surrounded by a dielectric material.
 9. Amethod of forming a microelectronic package structure comprising:disposing an interconnect bridge on a surface of a substrate, theinterconnect bridge comprising a die pad over a conductive interconnectstructure over a silicon material, and the interconnect bridgecomprising at least one vertical interconnect structure extendingthrough the silicon material beneath the conductive interconnectstructure, the conductive interconnect structure comprising a firstplurality of conductive lines along a first direction and a secondplurality of conductive lines along a second direction different thanthe first direction, and the at least one vertical interconnectstructure vertically beneath and coupled to the conductive interconnectstructure; disposing a die above the interconnect bridge, the diecoupled to the die pad of the interconnect bridge; and forming adielectric layer on a top and along sides of the interconnect bridge,the dielectric layer between the die and the interconnect bridge. 10.The method of claim 9, wherein the first plurality of conductive linesalong the first direction is in a first layer, and the second pluralityof conductive lines along the second direction is in a second layerdifferent than the first layer.
 11. The method of claim 9, wherein theconductive interconnect structure is a meshed power plane structure. 12.The method of claim 9, wherein the at least one vertical interconnectstructure is electrically coupled to the die.
 13. The method of claim 9,wherein the die is a memory die.
 14. The method of claim 9, wherein theat least one vertical interconnect structure comprises one of a groundvertical interconnect structure or a power vertical interconnectstructure.
 15. The method of claim 9, wherein the at least one verticalinterconnect structure comprises a portion of a vertical power deliverypath.
 16. The method of claim 9, wherein the at least one verticalinterconnect structure comprises a group of conductive vias surroundedby a dielectric material.
 17. A microelectronic system, comprising: aboard; a microelectronic package attached to the board, wherein themicroelectronic package comprises: a substrate; an interconnect bridgeon a surface of the substrate, the interconnect bridge comprising a diepad over a conductive interconnect structure over a silicon material,and the interconnect bridge comprising at least one verticalinterconnect structure extending through the silicon material beneaththe conductive interconnect structure, the conductive interconnectstructure comprising a first plurality of conductive lines along a firstdirection and a second plurality of conductive lines along a seconddirection different than the first direction, and the at least onevertical interconnect structure vertically beneath and coupled to theconductive interconnect structure; a die above the interconnect bridge,the die coupled to the die pad of the interconnect bridge; and adielectric layer on a top and along sides of the interconnect bridge,the dielectric layer between the die and the interconnect bridge. 18.The microelectronic system of claim 17, wherein the first plurality ofconductive lines along the first direction is in a first layer, and thesecond plurality of conductive lines along the second direction is in asecond layer different than the first layer.
 19. The microelectronicsystem of claim 17, wherein the conductive interconnect structure is ameshed power plane structure.
 20. The microelectronic system of claim17, wherein the at least one vertical interconnect structure iselectrically coupled to the die.